Article · Journal · 2025

Impact of Doping Concentration and Temperature on Carrier Mobilities in 4H-SiC Based Semiconductor Devices: A Sentaurus TCAD Simulation Study

International Journal of Science for Global Sustainability

Citations: 0from other works
Field-weighted impact: 0.001.00 is the world average for its field and year
Among its field: 6th percentileby citations, against works of its field and year
Authors: 7from 3 institutions

Authors

7 authors across 3 institutions in 1 country