Article · Journal · 2025

A High-Gain, High-Bandwidth, Bidirectional Discrete GaN-Based SyncFET dv/dt Sensor for MHz Power Converters

Power Electronics and Drives

Citations: 0from other works
Field-weighted impact: 0.001.00 is the world average for its field and year
Among its field: 18th percentileby citations, against works of its field and year
Authors: 3from 2 institutions

Authors

3 authors across 2 institutions in 1 country