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Optoelectrical properties of Al/p-Si/Fe:N doped ZnO/Al diodes · Peerford

Article · Journal · 2018

Optoelectrical properties of Al/p-Si/Fe:N doped ZnO/Al diodes

B. Coşkun, Kwadwo Mensah‐Darkwa, M. Soylu, Abdullah G. Al-Sehemi, Aysegul Dere, Ahmed A. Al-Ghamdi and 2 more

Thin Solid Films

Closed access
World top 10%
International · 4 countries

Go to the publisher 10.1016/j.tsf.2018.03.033

Citations: 28from other works
Field-weighted impact: 2.761.00 is the world average for its field and year
Among its field: Top 10%by citations, against works of its field and year
Authors: 8from 7 institutions

Authors

8 authors across 7 institutions in 4 countries

B. CoşkunFirst author
Kwadwo Mensah‐Darkwa
- Kwame Nkrumah University of Science and Technology (GH)
as printed: K. Mensah-Darkwa
M. SoyluCorresponding
Abdullah G. Al-Sehemi
Aysegul Dere
as printed: A. Dere
Ahmed A. Al-Ghamdi
as printed: Ahmed Al-Ghamdi
Ram K. Gupta
as printed: R.K. Gupta
Fahrettin YakuphanogluSenior author

as printed: F. Yakuphanoglu

Development goals

7Affordable and clean energy

Funded by

King Khalid University

Countries on it

Ghana
Saudi Arabia
Turkey
United States

Also on it

Bingöl Universityeducation · TR
Fırat Universityeducation · TR
King Abdulaziz Universityeducation · SA
King Khalid Universityeducation · SA
Kırklareli Universityeducation · TR
Pittsburg State Universityeducation · US

Fields

A work can sit in several, each with a score

Semiconductor materials and interfacesTopic
ZnO doping and propertiesTopic
Chalcogenide Semiconductor Thin FilmsTopic